{"id":3733,"date":"2026-03-09T17:36:45","date_gmt":"2026-03-09T21:36:45","guid":{"rendered":"https:\/\/blogs.sw.siemens.com\/calibre\/?p=3733"},"modified":"2026-03-26T16:24:36","modified_gmt":"2026-03-26T20:24:36","slug":"siemens-eda-2026-at-spie-advanced-lithography","status":"publish","type":"post","link":"https:\/\/blogs.sw.siemens.com\/calibre\/2026\/03\/09\/siemens-eda-2026-at-spie-advanced-lithography\/","title":{"rendered":"ICYMI: Siemens EDA at 2026 SPIE Advanced Lithography + Patterning"},"content":{"rendered":"\n
\"Celebrating<\/figure>\n\n\n\n

The 50th<\/sup> SPIE Advanced Lithography + Patterning symposiums were held February 22-26 this year with the usual enthusiastic and sizable attendance. As always, the Siemens EDA Calibre Manufacturing<\/a><\/strong> group was well represented with two invited papers, a keynote presentation and 13 session papers covering topics on advancing next-generation semiconductor lithography. <\/p>\n\n\n\n

Siemens keynote presentation at SPIE Advanced Lithography + Patterning<\/h2>\n\n\n\n

On February 24, we were treated to an eye-opening keynote by Dr. James Shiely, Calibre Mask Synthesis R&D Director at Siemens EDA. His presentation, titled \u201cPatterning the singularity: Computational lithography\u2019s history and future within the accelerating software\/hardware feedback loop<\/a><\/strong>,\u201d took everyone on a tour through computational lithography’s evolution. Dr. Shiely explored its pivotal role in the technological singularity, where AI could potentially surpass human capabilities. He highlighted the intricate AI-lithography-chip feedback loop and the challenges that temper exponential forecasts. Dr. Shiely’s vision for sub-atomic scaling, coupled with an open invitation for collaboration, truly set the stage for groundbreaking advancements in AI.<\/p>\n\n\n

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\"Dr.
Dr. James Shiely of Siemens EDA., gave a keynote talk at SPIE 2026 Advanced Lithography + Patterning. Image courtesy of SPIE. Photographer: Ronald Goossens https:\/\/www.vibrantlightgallery.com\/<\/figcaption><\/figure><\/div>\n\n\n

Siemens invited papers at SPIE Advanced Lithography + Patterning<\/h2>\n\n\n\n

Our first invited paper,<\/strong> \u201cInverse lithography in polar coordinates<\/a><\/strong>,\u201d was presented by Yuri Granik on February 25. This paper introduced a novel polar coordinate approach to ILT, promising superior accuracy, faster convergence and reduced data volume by optimizing mask representation. This exploration into novel approaches to inverse lithography is a critical technique for optimizing mask patterns to achieve desired wafer features. By utilizing polar coordinates, the research aims to enhance the precision and efficiency of OPC, especially for complex curvilinear designs.<\/p>\n\n\n\n

Our second invited paper<\/strong>, \u201cVector-based site-anchor decoupling for curvilinear optical proximity correction,<\/a><\/strong>\u201d<\/a> was presented by Sagar Saxena on February 26. \u00a0This paper introduced a new framework for curvilinear OPC, enabling independent site placement and dynamic optimization for improved EPE accuracy and faster convergence. This session delved into advanced methods for curvilinear OPC, focusing on decoupling site-anchor interactions to achieve more accurate and robust pattern correction. The vector-based approach promises improved fidelity and manufacturability for leading-edge technology nodes.<\/p>\n\n\n\n

Siemens papers at SPIE Advanced Lithography + Patterning<\/h2>\n\n\n\n

The 13 other papers and posters delved into a variety of topics, including:<\/p>\n\n\n\n