Can you hear hordes of parasitics crawling through your design layouts? Do you lie awake wishing you could just get rid of them all? Advanced node designs and 3D-IC packages are presenting a variety of new and complex parasitic issues to designers. FinFETs, FD-SOI, and GAA transistors extend gate scaling, but generate increased parasitic interactions between neighboring geometries. 3D-IC promises to provide device scaling while minimizing cost, but requires verification of parasitic effects between components and interconnect on multiple processes.<\/p>\n
Some design companies have adopted changes to their design methodologies in an effort to reduce parasitic effects, but a more long-term solution is a comprehensive approach that includes extensive interconnect modeling and extraction, combined with enhanced design analysis. After all, if you don\u2019t know where the next parasitic is coming from, isn\u2019t it better to have an eradication strategy that can handle anything that comes along?<\/p>\n
If you\u2019re ready to realize the performance and market benefits of your advanced node and\/or 3D-IC designs, you should check out our white paper, Parasitic Extraction Technologies for Advanced Node and 3D-IC Design<\/a>. It\u2019ll help you exterminate the parasitics you see, and the ones you never knew existed.<\/p>\n![\"\"](\"https:\/\/blogs.sw.siemens.com\/wp-content\/uploads\/sites\/50\/2018\/09\/TN_FOWLP-extract.jpg\")
<\/a>The Calibre\u00ae xACT\u2122 solution offers accurate capture of parasitic and layout-dependent effects for non-planar devices in interconnect modeling, accurate extraction and modeling for 3D-IC designs, and netlist input for downstream analysis. Simultaneous multi-corner extraction handles complex modeling requirements with efficient processing, while providing device location information to the EM\/self-heating analysis ensures current density violations can be accurately identified and resolved.<\/p>\n